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Power Transistor Arrays (F-MOS FETs)
PUB4753 (PU7457)
Silicon N-Channel Power F-MOS FET (with built-in zener diode)
I Features
G High avalanche energy capacity G High electrostatic breakdown voltage G No secondary breakdown G High breakdown voltage, large allowable power dissipation G Allowing Low-voltage drive G Contactless relay G Diving circuit for a solenoid G Driving circuit for a motor G Control equipment G Switching power supply
1.650.2 9.50.2
unit: mm
25.30.2
4.00.2
I Applications
4.40.5
8.0
0.50.15 1.00.25 2.540.2 92.54=22.860.25
0.80.25 0.50.15
C1.50.5
I Absolute Maximum Ratings (TC = 25C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature
*
1
2
3
4
5
6
7
8
9 10
Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg
Ratings 100 15 20 3 9 22.5 15 3.5 150 -55 to +150
Unit V V A A mJ W C C
1 10 2
DC Pulse Non repetition TC = 25C Ta = 25C
G: Gate D: Drain S: Source 10-Lead Plastic SIL Package
Internal Connection
3 5 7 9
4
6
8
L = 5mH, IL = 3A, 1 pulse
I Electrical Characteristics (TC = 25C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on)1 RDS(on)2 | Yfs | VDSF Coss ton tf td(off) Conditions VDS = 80V, VGS = 0 VGS = 20V, VDS = 0 ID = 1mA, VGS = 0 VDS = 10V, ID = 1mA VGS = 10V, ID = 2A VGS = 4V, ID = 2A VDS = 10V, ID = 2A IDR = 3A, VGS = 0 130 VDS = 10V, VGS = 0, f = 1MHz 160 25 VGS = 10V, ID = 2A VDD = 50V, RL = 25 0.2 0.3 1.5 2.5 85 1 300 400 4 -1.6 min typ max 10 10 115 2.5 450 600 Unit A A V V m m S V pF pF pF s s s
Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time Fall time Turn-off time (delay time)
Note) The part number in the parenthesis shows conventional part number.
225
Power Transistor Arrays (F-MOS FETs)
Area of safe operation (ASO)
100 30 10 3 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 IDP t=100s ID 1ms 10ms 100ms DC 24
PUB4753
EAS Tj
25
PD Ta
Avalanche energy capacity EAS (mJ) Allowable power dissipation PD (W)
(1) TC=Ta (2) With a 50 x 50 x 2mm Al heat sink (3) Without heat sink
Non repetitive pulse TC=25C
ID=3A
20
20
Drain current ID (A)
16 (1) 12
15
10
8 (2) 4
5
(3)
0 0 20 40 60 80 100 120 140 160
0 25
50
75
100
125
150
Drain to source voltage VDS (V)
Ambient temperature Ta (C)
Junction temperature Tj (C)
IAS L-load
10 TC=25C 8 7
ID VGS
6 VDS=10V TC=25C
Vth TC
VDS=10V ID=1mA 5
Avalanche current IAS (A)
3
ID
Drain current ID (A)
22.5mJ 1
6 5 4 3 2 1 0
Gate threshold voltage Vth (V)
0 1 2 3 4 5 6
4
0.3
3
0.1
2
0.03
1
0.01 1 3 10 30 100
0 0 25 50 75 100 125 150
L-load (mH)
Gate to source voltage VGS (V)
Case temperature TC (C)
ID VDS
Drain to source ON-resistance RDS(on) ()
8 7 VGS=10V 6 5 4 3 3V 2 1 0 0 10 20 30 40 600
RDS(on) ID
5
| Yfs | ID
Forward transfer admittance |Yfs| (S)
TC=25C VDS=10V TC=25C 4
500 VGS=4V
Drain current ID (A)
4V 3.5V
400
3
300 10V 200
2
100
1
2.5V 15W 50 60
0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Drain to source voltage VDS (V)
Drain current ID (A)
Drain current ID (A)
226
Power Transistor Arrays (F-MOS FETs)
Ciss, Coss, Crss VDS
Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
104 f=1MHz TC=25C 80
PUB4753
ton, tf, td(off) ID
16 ID=3A TC=25C 14 12 10 VDS=25V 8 50V 6 4 2 VDS 0 12 4.0 3.5 VDD=50V VGS=10V TC=25C
VDS, VGS Qg
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
70 60 50 40 30 20 10 0
103
Switching time ton,tf,td(off) (s)
3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 td(off)
Coss 102 Ciss Crss 10
VGS
tf ton
1 0 20 40 60 80 100
0
2
4
6
8
10
Drain to source voltage VDS (V)
Gate charge amount Qg (nC)
Drain current ID (A)
PZSM tp
10000 3000 tp 1000 300 100 30 10 3 1 0.1
Zener diode power PZSM (W)
0.3
1
3
10
30
100
Pulse width tp (ms)
227
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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